<summary> This article refers to the address: http:// ROHM, a world-renowned semiconductor manufacturer, has developed a 650V voltage-resistant IGBT*2 "RGTV series (short-circuit withstand capability*3 retention version)" and "RGW series (high-speed switching version) with the industry's top low conduction loss*1 and high-speed switching characteristics. )", a total of 21 models. These products are ideal for power conversion of general purpose inverters and converters for consumer electronics such as UPS (Uninterruptible Power Supply), welding machine and power control board industrial equipment, air conditioning, IH (Induction Heating). The new series of products developed using thin wafer technology and ROHM's unique structure have achieved industry-leading performance in terms of low conduction loss and high-speed switching characteristics. For example, when used in an interleaved PFC circuit, the efficiency is increased by 1.2% at light load and 0.3% at heavy load compared with the conventional product, which helps to further reduce the power consumption of the application. In addition, through the internal optimization of the components, a smooth soft switch is realized. Compared with ordinary products of the same efficiency, the voltage overshoot*4 is reduced by 50%, which reduces the number of parts that have been used in the past, and significantly reduces the design burden. This series of products began to sell samples in October 2017 (sample price 400 yen ~ / one: excluding tax), and began mass production in December 2017 with a monthly production capacity of 100,000. The production base of the pre-process is Lashibi Semiconductor Miyazaki Co., Ltd. (Miyazaki Prefecture, Japan), and the production base for the later process is ROHM Integrated Systems (Thailand) (Thailand). <background> In recent years, with the increase in the amount of data brought about by the IoT process, the requirements for high performance of data centers have become higher and higher. Not only the server itself, but also a UPS that is indispensable for the stable supply of the main power supply, the overall power consumption of the system is significantly increased, and further reduction of power consumption has become an important issue. In addition, in high-power applications using IGBTs, in order to ensure the reliability of the equipment, it is necessary to take measures against the overshoot at the time of switching that may cause component failure or equipment malfunction, and simplifying the demand is becoming more and more urgent. <Features> 1. Achieve industry-leading low conduction loss and high speed switching performance In this new series, thin wafer technology is used to make the wafer thickness 15% thinner than the previous products. In addition, ROHM's original cell miniaturization structure is used to successfully achieve the industry's top low conduction loss (VCE(sat)=1.5 V) and high speed switching characteristics (tf = 30 ~ 40ns). 2. Realize soft switch to reduce equipment design burden Through the internal optimization of the components, the soft switch for smooth switching of ON/OFF is realized. As a result, the voltage overshoot generated during switching is reduced by 50% compared with the conventional product, and the number of components such as the external gate resistor and the snubber circuit for suppressing overshoot can be reduced. When the IGBT is used, the application side no longer needs the overshooting measures that have been required in the past, which is advantageous for reducing the design burden. <Product lineup> The product lineup has added the RGTV series featuring "short-circuit withstand capability of 2μs" and the RGW series featuring "high-speed switching performance" to support a wider range of applications. RGTV series (short circuit withstand capability) RGW series (high speed switching version) <application> Industrial equipment (UPS (uninterruptible power supply), welding machine, power control board, etc.), air conditioning, IH (induction heating), etc. <term explanation> ※1 conduction loss Transistors such as MOSFETs and IGBTs have a voltage drop when current flows due to component structure. The conduction loss is the loss due to the voltage drop of such a component. *2 IGBT: Insulated Gate Bipolar Transistor A power transistor with both high-speed switching characteristics of the MOSFET and low conduction loss characteristics of the bipolar transistor. *3 Short circuit withstand capability Short circuit causing damage to components (2 points of electronic circuit are connected with low resistance resistors) Tolerance. ※4 voltage overshoot A voltage exceeding the specified voltage value is generated when the switch is turned ON/OFF. The voltage value temporarily exceeds the steady state value due to overshoot and then returns to near steady state. Middle-low Level Lighting Sky Curtain Middle-Low Level Lighting Sky Curtain,Ultra Transparency Display,Digital Signage Video Display,High Brightness Led Outdoor Lighting Kindwin Technology (H.K.) Limited , https://www.ktlleds.com
